A 60-GHz fully-integrated Doherty power amplifier based on 0.13-μm CMOS process
Wicks B., Skafidas E., Evans R.
A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 μm RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-chip. The prototype operating from a 1.6-V supply exhibits an output referred P1dB of 7.0 dB, a PSAT of +7.8 dBm, with peak power gain of 13.5 dB, a 3-dB bandwidth of 6.7 GHz, and 3.0 % PAE. The die area is 1.8mm2. This amplifier achieves the highest reported figure of merit for power amplifiers of any published millimeter-wave PA on CMOS. © 2008 IEEE.