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Jefferson Laboratory's Free Electron Laser (FEL) incorporates a cesiated gallium arsenide (GaAs) DC photocathode gun as its electron source. By using a set of scanning mirrors, the surface of the GaAs wafer is illuminated with a 543.5nm helium-neon laser. Measuring the current flow across the biased photocathode generates a quantum efficiency (QE) map of the 1-in. diameter wafer surface. The resulting QE map provides a very detailed picture of the efficiency of the wafer surface. By generating a QE map in a matter of minutes, the photocathode scanner has proven to be an exceptional tool in quickly determining sensitivity and availability of the photocathode for operation. © 2001 Elsevier Science B.V. All rights reserved.

Original publication

DOI

10.1016/S0168-9002(01)01695-3

Type

Conference paper

Publication Date

21/11/2001

Volume

475

Pages

554 - 558