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Noise performance of the switched emitter follower (SEF) track and hold (TH) amplifier is analyzed. Simulations based on a commercial available 130 nm SiGe HBT process technology are implemented with the SpectreRF circuit simulator. It is shown that both the thermal noise and shot noise contribute to the TH amplifier (THA) at ultra high frequency. Simulations also locate the major noise contributor in the SEF THA. Approximate expressions for the output noise of the major noise contributor of the THA are derived and the numerical experiment of the output noise is presented.

Type

Conference paper

Publication Date

01/12/2010

Pages

1386 - 1391