Small signal model extraction procedure for RF SoS MOSFETs

Silicon on Sapphire technology holds significant promise for the implementation of millimeter wave and radio frequency systems and circuits. Circuits built using this technology have higher linearity. The sapphire insulating substrate allows for very tow coupling between circuit components and the realization of higher quality factor inductors due to reduced induced eddy currents in the substrate, Unfortunately many foundry process development kits do not support millimeter wave frequency design. The extraction procedures successful at lower frequencies for lumped circuit extraction are prone to failure at higher frequencies. This paper proposes a multi-step extraction procedure that is shown to accurately extract model parameters at higher frequencies. The contributions of this paper are: 1) A small signal model extraction procedure that permits accurate extraction of parameters at millimeters wave frequencies. 2) A small signal equivalent millimeter wave frequency model for Silicon on Saphire (SOS).